inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 18N10 features drain current i d = 18a@ t c =25 drain source voltage : v dss = 100v(min) static drain-source on-resistance : r ds(on) = 0.14 (max) fast switching applications switch regulators switching converters, motor drivers, relay drivers absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 100 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 18 a i dm drain current-single plused 45 a p d total dissipation @t c =25 90 w t j max. operating junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.67 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 18N10 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d =1ma 100 v v gs (th ) gate threshold voltage v ds = v gs ; i d =250 a 2.0 4.0 v v sd diode forward on-voltage i s = 18a ;v gs = 0 1.4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 9a 0.14 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =80v; v gs = 0 1 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 1700 pf c rss reverse transfer capacitance 300 c oss output capacitance 750 t r rise time v gs =10v; i d =9a; v dd =50v; r l =50 300 450 ns t d(on) turn-on delay time 60 90 t f fall time 150 225 t d(off) turn-off delay time 150 225 pdf pdffactory pro www.fineprint.cn
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